KMPR® 1000 resists are available in five standard viscosities, as shown in Table 1. Figure 1 provides the information required to select the appropriate KMPR® 1000 resist and spin conditions, to achieve the desired film thickness.
KMPR® 1000 is a high‑contrast, epoxy‑based i‑line photoresist designed for easy processing and reliable patterning.
KMPR® 1000 develops in standard aqueous TMAH developers and can be removed more easily after fabrication compared to traditional epoxy resists.
Available in five viscosities, KMPR® 1000 enables single‑coat thicknesses from 4–110 μm. With excellent adhesion, as well as strong chemical and plasma resistance, it is ideal for MEMS, electrolytic plating, and DRIE applications that require durable, high‑performance microstructures.
MEMS and microsystem manufacturing
KMPR® 1000 resists are available in five standard viscosities, as shown in Table 1. Figure 1 provides the information required to select the appropriate KMPR® 1000 resist and spin conditions, to achieve the desired film thickness.
1. Dispense 1 ml of resist for each inch (25 mm) of substrate diameter
2. Spin at 500 rpm for 5–10 seconds with acceleration of 100 rpm/second
3. Spin at 3000 rpm for 30 seconds with acceleration of 300 rpm/second
Table 2 shows the recommended soft bake temperature and times for the various KMPR® 1000 products at selected film thicknesses. The recommended bake temperature is 100ºC, however temperatures from 95–105ºC may also be used.
To obtain vertical sidewalls in the KMPR® 1000 resist, we recommend the use of a longpass filter to eliminate UV radiation below 350 nm. With the recommended filter (PL-360LP), an increase in exposure time of approximately 40% is required to reach the optimum exposure dose.
A post exposure bake (PEB) is required to complete the curing reaction and should take place directly after exposure. Table 5 shows the recommended times and temperature for various approximate thickness targets. The recommended temperature is 100˚C, however temperatures from 95–105˚C may also be used.
KMPR® 1000 resist has been designed for use with 2.38% TMAH (0.26N) aqueous alkaline developer in immersion, spray or spray-puddle processes. Other solvent based developers such as SU-8 developer may also be used instead of TMAH. Strong agitation during development is recommended for high aspect ratio and/or thick film structures. Recommended develop times for immersion processes are given in Table 6 for TMAH and Table 7 for SU-8 developer. These develop times are approximate, since actual dissolution rates can vary widely as a function of agitation.
