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Overview

Formulated for ultra‑thick film processes, SU‑8 XFT delivers improved adhesion and reduced coating stress for reliable high‑performance patterning.

With a single‑coat capability of 50 to over 200 μm, SU‑8 XFT supports extremely thick layers while maintaining excellent imaging quality. It produces high‑aspect‑ratio structures exceeding 5:1 with near‑vertical sidewalls, making it ideal for demanding permanent microfabrication applications.

Key features

  • High aspect ratio imaging of ultra-thick structures
  • Vertical sidewalls
  • i-line (365 nm) and broadband processing
  • Improved adhesion
  • Reduced coating stress
  • 50 to 200 μm film thickness in a single coat

  • Material uses
  • Thick- and thin-film photolithography
  • Microfluidic channel patterning​
  • Dry etch masks​
  • PDMS Mold Fabrication​
  • High-aspect-ratio microstructure fabrication​
  • Optical waveguide and micro-optic patterning​

Industry Applications

  • MEMS and microsystem manufacturing

  • Microfluidic and lab-on-chip devices

  • Biomedical and life science devices

  • Structural microcomponents (microarrays, fluidic channels, display pixel walls, dielectric layers)

  • Advanced microstructure prototyping and production

Recommended ancillaries

Remover PG

To strip PMGI, LOR, PMMA, KMPR® 1000 & minimally cross-linked SU-8 resists
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CP Thinner

To dilute SU-8 3000 & KMPR® 1000 resists.
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SU-8 Developer

SU-8, SU-8 3000, SU-8 TF 6000, SU-8 XFT 75 & 100, KMPR 1000, and KMSF 2000 resist development.
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EBR PG

Edge Bead Remover
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Process parameters

Coat

SU-8 XFT resists are available in two standard viscosities, 22,000 cSt for SU-8 XFT75 and 45,000 cSt for SU-8 XFT100. The film thickness vs. spin speed curve is displayed in Figure 1. The curve was generated on a 6-inch (150 mm) silicon wafer using a closed bowl configuration.

Recommended Coating Conditions

  1. Dispense 1 ml of resist for each inch (25mm) of substrate diameter.
  2. Spin at 500 rpm for 5–10 seconds with acceleration of 100 rpm/second.
  3. Spin at 3000 rpm for 30 seconds with acceleration of 1000 rpm/second.

su 8 xft series thickness vs spin speed

Soft Bake

A level hotplate with good thermal control and uniformity is recommended for use during the soft baking step of the process. Table 1 shows the recommended soft bake temperatures and times for various film thicknesses of SU-8 XFT.

su 8 xft series soft bake times

Exposure

To obtain vertical sidewalls in the SU-8 XFT resist, we recommend the use of a long pass filter to eliminate UV radiation below 350 nm. A typical exposure dose with measured intensity at 365 nm for 50 to 200 μm films are listed in Table 2.

su 8 xft series exposure dose

Post Exposure Bake

PEB should take place directly after exposure. Table 3 shows the recommended temperatures and times.

su 8 xft series post exposure bake times

Development

SU-8 XFT photoresist has been designed for use in immersion or spray-puddle processes with Kayaku Advanced Materials’ SU-8 developer.

The recommended baseline development times using an immersion process with mild agitation (40 rpm) through an orbital shaker is given in Table 4.

If using a spray/puddle process, 3-minute SU-8 Developer puddles are recommended.

su 8 xft series development time for su 8 developer

Downloads

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