Underlayer resists engineered for clean metal patterning through controlled undercut formation. Available in e-beam, solvent, and aqueous-compatible formulations for bi-layer and single-layer lift-off processes.
Formulated to avoid intermixing with imaging resists. Compatible with aqueous alkaline and solvent-based developer systems.
Use UniLOR N for simplified metal patterning: negative tone lift-off resist with good profile control and reliable stripping.
Ideal for
Ancillaries
LOR / PMGI lift-off resists enable clean metal patterning by forming a controllable undercut and avoiding intermixing with imaging resist.
Ideal for
Ancillaries
Use PMMA resists for reliable, high-fidelity electron beam patterning thanks to mature chemistry and wide process experience.
Ideal for
Ancillaries
