KMSF® 1000 Low stress Photo-dielectric

KMSF® 1000 is a negative tone, polyimide-based photo-dielectric for use as an ultra-low stress buffer, passivation or protective layer.

Material Attributes:
  • Negative tone, photoimageable dielectric
  • No warpage due to low shrinkage and tensile modulus
  • Solvent developable
  • I-Line/broadband sensitivity, 1:1 aspect ratio imaging
  • Low temperature processing (< 200°C)
  • Good electrical properties
  • High thermal and chemical stability
  • Low moisture uptake
20 µm via
10 µm Film Thickness
50 µm via
10 µm Film Thickness
15 µm L/S
10 µm Film Thickness

Lithography Process

Type Liquid Negative Tone
Film Thickness
 ~ 3 to 10 µm
Soft Bake 110°C, 10 minutes
Exposure Dose > 400 mJ/cm2 (EVG Broadband aligner)
Proximity, intensity measured at 365 nm)
Development Spray develop with KMSF® Developer
23˚C, 70 rpm, 60 seconds spray, 60 seconds puddle + 60 seconds spray
Rinse Spray rinse in KMSF® Developer
23˚C, 70 rpm, 10 seconds + 2000 rpm, 15 seconds
Hard Bake 175°C, 60 minutes

Cured Film Properties

Property Value
Mechanical Properties Young’s Modulus 0.14 GPa
Tensile Strength 37 MPa
CTE α1 (<Tg) 140 ppm/˚C
Elongation 160%
Residual Stress 0.2 MPa
Thermal Properties Tg (TMA) 57˚C
5% Weight Loss Temperature in N2 420°C
Electrical Properties Volume Resistivity 1.8 x 1015 Ohm·cm
Electric Strength 1.8 kV/10 µm
Dielectric Constant, 1GHz 2.6
Dissipation Factor , 1GHz 0.008
Water Absorption Moisture Absorption (23˚C/85%RH, 24 hours) 0.1%

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Wafer Warpage Comparison


Wafer size/thickness: 200 mm/50 µm
Material film thickness: 10 µm