KMSF® 1000 is a negative tone, polyimide-based photo-dielectric for use as an ultra-low stress buffer, passivation or protective layer.
Material Attributes: |
- Negative tone, photoimageable dielectric
- No warpage due to low shrinkage and tensile modulus
- Solvent developable
- I-Line/broadband sensitivity, 1:1 aspect ratio imaging
- Low temperature processing (< 200°C)
- Good electrical properties
- High thermal and chemical stability
- Low moisture uptake
10 µm Film Thickness
10 µm Film Thickness
10 µm Film Thickness
Lithography Process
| Type | Liquid Negative Tone |
| Film Thickness | ~ 3 to 10 µm |
| Soft Bake | 110°C, 10 minutes |
| Exposure Dose | > 400 mJ/cm2 (EVG Broadband aligner) Proximity, intensity measured at 365 nm) |
| Development | Spray develop with KMSF® Developer 23˚C, 70 rpm, 60 seconds spray, 60 seconds puddle + 60 seconds spray |
| Rinse | Spray rinse in KMSF® Developer 23˚C, 70 rpm, 10 seconds + 2000 rpm, 15 seconds |
| Hard Bake | 175°C, 60 minutes |
Cured Film Properties
| Property | Value | |
| Mechanical Properties | Young’s Modulus | 0.14 GPa |
| Tensile Strength | 37 MPa | |
| CTE α1 (<Tg) | 140 ppm/˚C | |
| Elongation | 160% | |
| Residual Stress | 0.2 MPa | |
| Thermal Properties | Tg (TMA) | 57˚C |
| 5% Weight Loss Temperature in N2 | 420°C | |
| Electrical Properties | Volume Resistivity | 1.8 x 1015 Ohm·cm |
| Electric Strength | 1.8 kV/10 µm | |
| Dielectric Constant, 1GHz | 2.6 | |
| Dissipation Factor , 1GHz | 0.008 | |
| Water Absorption | Moisture Absorption (23˚C/85%RH, 24 hours) | 0.1% |
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Wafer Warpage Comparison
Wafer size/thickness: 200 mm/50 µm
Material film thickness: 10 µm