ma-P 1200

Photoresist series designed for the use in microelectronics and microsystems technology

  • Variety of viscosities for 0.3 – 40 μm film thickness in one spin-coating step
  • Broadband, g-, h- and i-Line exposure
  • Very good pattern stability in wet etch processes & acid & alkaline plating baths
  • Highly stable in dry etch processes, e.g. CHF3, CF4, SF6

Data sheet:

Ancillaries:

Applications:

  • Dry etch
  • Plating: Thick positive resists
  • Wet etch