TempKoat™ N Negative Temporary Photoresist

TempKoat™ N is a chemically amplified, negative-tone resist series for advanced packaging and MEMS applications.

TempKoat™ N 15 is the first dilution available in the TempKoat™ N series and is optimized for thick resist applications from 7 to 20 μm.

Material Attributes:

  • Negative tone, chemically amplified resist
  • 7 to 20 µm film thickness in a single coat
  • i-Line/broadband sensitivity, 2:1 achievable aspect ratio
  • No rehydration or latency delay
  • Aqueous alkaline development (standard 0.26N TMAH)
  • Excellent resistance to copper plating chemistries
  • Residue-free removal

Material Uses:

  • Electroplating
  • RDL
  • Microbumping

* Note: Product not commercially available within the United States; however, small scale quantities may be purchased in the United States for R&D purposes.

Lithography Process for TempKoat™ N 15

Substrate 150 mm Cu wafer
Spin Speed 2000 rpm/30 seconds
Film Thickness 15 µm
Soft Bake 115°C, 3.5 minutes (hot plate)
Exposure 85 mJ/cm2

ABM Broadband aligner with 360 nm long pass filter

Intensity measured at 365 nm
PEB 95°C, 2 minutes (hot plate)
Development Spray develop with 0.26N TMAH Developer
2 x 60 seconds puddle
15 µm trenches in 15 µm thick resist

Cu Plating Process for TempKoat™ N 15

Surface Prep. O2 Plasma

80SCCM, 350W, 3 minutes
Technic Elevate® Cu 6300 Cleaner (or equivalent)

room temperature, 1.5 minutes, shaker table
Plating Technic Elevate® Cu 6388

I = 8.05A, 4.17 minutes, 80˚F
Resist Removal DMSO-based remover (DuPont INTERVIA™ 2011 Remover)

Immersion and agitation for 15 minutes at ambient temperature

15 µm Cu plated vias in 15 µm thick resist before and after resist removal

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15 µm trenches in 15 µm thick TempKoat™ N
before and after copper plating and resist removal