Kayaku Advanced Materials’ partnership with DuPont Electronic Materials spans over 25 years. It is a relationship that integrates distribution and licensing of DuPont, Shipley semiconductor and advanced packaging electronic materials, and value-added services founded in Kayaku Advanced Materials’ chemical and formulary knowledge, applications experience, and process engineering expertise.
Negative-tone, ultra-low stress photo-patternable dielectric for wafer level packaging.
Data Sheet
Ancillaries
Applications
Negative-tone, low temperature cure, low Dk/Df photo-patternable dielectric for wafer level Packaging.
Data Sheet
Ancillaries
Applications
Negative photoresist emulsion that can be applied onto a wide variety of electrically-conductive substrates by anaphoretic electrodeposition.
Negative photoresist emulsion that can be applied onto a wide variety of electrically-conductive substrates by cathodic electrodeposition.
Thick, positive-tone, temporary resist for advanced packaging and MEMS applications.
Data Sheet
Ancillaries
Applications
Thick, negative-tone, temporary resist for advanced packaging and MEMS applications.
Data Sheet
Ancillaries
Applications
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Photoresist series designed for the use in microelectronics and microsystems technology
Thick photoresists designed for electroplating structures in microsystems technology
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
The InterVia 8023 Series photodielectrics are spin-on deposited, negative tone, TMAH(aq) developable and curable at low temperatures.
Advanced electronic dielectric materials for microelectronic device fabrication.
Advanced electronic resins developed for use as photoimageable dielectrics in thin film microelectronics applications.
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Designed for the production of micro-optical components and wafer scale patterning
Designed for the production of micro-optical components produced by UV moulding of optical components
Photoresist series designed for the use in microelectronics and microsystems technology
Thick photoresists designed for electroplating structures in microsystems technology
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Resist system for laminated waveguides
ORMOCER® System for Planar Optical Waveguides
Hybrid polymers based on ORMOCER®s for micro-optics licensed by the Fraunhofergesellschaft zur Förderung der Angewandten Forschung in Deutschland e.V.
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Non-polar thermoplastic for permanent applications.
Photoresist series designed for the use in microelectronics and microsystems technology
Non-polar thermoplastic for permanent applications.
Negative resists for direct laser writing @ 405 nm
Thick positive photoresist designed for the requirements of grayscale lithography
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Non-polar thermoplastic for permanent applications.
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Ormostamp® for working stamp fabrication
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Non-polar thermoplastic for permanent applications.
Designed for the production of micro-optical components produced by UV moulding of optical components
Ormostamp® for working stamp fabrication
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Negative tone, epoxy-based, photoimageable bonding resists used as a permanent adhesive layer for the definition and capping of cavity structures.
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Designed for the production of micro-optical components and wafer scale patterning
Designed for the production of micro-optical components produced by UV moulding of optical components
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Resist system for laminated waveguides
ORMOCER® System for Planar Optical Waveguides
Hybrid polymers based on ORMOCER®s for micro-optics licensed by the Fraunhofergesellschaft zur Förderung der Angewandten Forschung in Deutschland e.V.
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
Negative-tone resists for lift-off processes.
Data Sheet
Ancillaries
Applications
Enhanced dissolution rate, dyed PMGI solution used for lift-off processes requiring tight CD control.
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Positive photoresists for advanced IC device fabrication.
General purpose, high-throughput, i-Line photoresist for 0.35 µm front-end and back-end applications
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Positive photoresist engineered for i-line, g-line, and broadband applications with high resolution, high throughput, and excellent process latitudes.
Photoresist series designed for the use in microelectronics and microsystems technology
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
Negative photoresist series well suited for e-beam and deep UV exposure in the manufacturing of semiconductor devices.
Negative photoresist emulsion that can be applied onto a wide variety of electrically-conductive substrates by anaphoretic electrodeposition.
Negative photoresist emulsion that can be applied onto a wide variety of electrically-conductive substrates by cathodic electrodeposition.
Thick positive photoresist designed for the requirements of grayscale lithography
General purpose, high-throughput, i-Line photoresist for 0.35 µm front-end and back-end applications
Dyed photoresist for extremely high throughput processing on reflective substrates.
Negative photoresist series well suited for e-beam and deep UV exposure in the manufacturing of semiconductor devices.
An advanced resist for 130 nm design rules:
Negative photoresist series well suited for e-beam and deep UV exposure in the manufacturing of semiconductor devices.
Thick, negative-tone, temporary resist for advanced packaging and MEMS applications.
Data Sheet
Ancillaries
Applications
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
Negative photoresist for use in a wide variety of plating and etching processes used in wafer level packaging (WLP)
Thick, positive-tone, temporary resist for advanced packaging and MEMS applications.
Data Sheet
Ancillaries
Applications
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Photoresist series designed for the use in microelectronics and microsystems technology
Thick photoresists designed for electroplating structures in microsystems technology
Optimized to provide vertical profile imaging of dense and semi-isolated features for device production design rules to 180 nm
Positive DUV photoresist developed for deep implant applications
An advanced resist for 130 nm design rules:
Multipurpose resist that can be utilized for gate, phase shift mask contact holes, and trench applications in the 180-130 nm CD range
Negative-tone resists for lift-off processes.
Data Sheet
Ancillaries
Applications
Conventional pattern transfer and single-layer lift-off for microelectronics and micro systems technology
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Positive photoresists for advanced IC device fabrication.
Photoresist series designed for the use in microelectronics and microsystems technology
Designed for the production of micro-optical components and wafer scale patterning
Non-polar thermoplastic for permanent applications.
UV-curable material for permanent applications with isothermal processing
Low viscosity, solvent-free photo-curable NIL resist specifically designed for use with rigid and gas-impermeable working stamps like COC, COP, OrmoStamp®, or glass.
Very low release forces
No adhesion promoter or primer necessary
No oxygen inhibition
Mask for pattern transfer processes (dry and wet etching)
NIL resist with excellent curing and nanoimprint performance in combination with PDMS soft stamp materials.
mr-NIL212FC is a purely organic, photo-curable NIL resist with outstanding dry etch characteristics, fast curing properties and an excellent nanoimprint performance. It is particularly suited for soft-NIL using soft stamp materials such as PDMS. mr-NIL212FC exhibits a markedly enhanced etching stability in RIE processes compared to mr-NIL210.
NIL resist with a high level of fluorinated components yielding excellent stamp release properties and minimal defects.
Designed for the production of micro-optical components produced by UV moulding of optical components
Ormostamp® for working stamp fabrication
NIL resist applicable by inkjet printing and with high curing speeds suitable for roll-to-roll NIL processes.
Ormostamp® for working stamp fabrication
Non-polar thermoplastic for permanent applications.
UV-curable material for permanent applications with isothermal processing
Low viscosity, solvent-free photo-curable NIL resist specifically designed for use with rigid and gas-impermeable working stamps like COC, COP, OrmoStamp®, or glass.
Very low release forces
No adhesion promoter or primer necessary
No oxygen inhibition
Mask for pattern transfer processes (dry and wet etching)
NIL resist with excellent curing and nanoimprint performance in combination with PDMS soft stamp materials.
mr-NIL212FC is a purely organic, photo-curable NIL resist with outstanding dry etch characteristics, fast curing properties and an excellent nanoimprint performance. It is particularly suited for soft-NIL using soft stamp materials such as PDMS. mr-NIL212FC exhibits a markedly enhanced etching stability in RIE processes compared to mr-NIL210.
NIL resist with a high level of fluorinated components yielding excellent stamp release properties and minimal defects.
NIL resist applicable by inkjet printing and with high curing speeds suitable for roll-to-roll NIL processes.
Designed for the production of micro-optical components and wafer scale patterning
Designed for the production of micro-optical components produced by UV moulding of optical components
Ormostamp® for working stamp fabrication
NIL resist applicable by inkjet printing and with high curing speeds suitable for roll-to-roll NIL processes.
Thermoplastics with built-in release properties for use as etch mask for pattern transfer and the fabrication of nanopatterns
mr-I 9000M for micro and nanofabrication
Non-polar thermoplastic for permanent applications.
Silicon-containing thermal nanoimprint resist for the fabrication of high aspect ratio patterns
Thermoplastics with built-in release properties for use as etch mask for pattern transfer and the fabrication of nanopatterns
mr-I 9000M for micro and nanofabrication
Non-polar thermoplastic for permanent applications.
Silicon-containing thermal nanoimprint resist for the fabrication of high aspect ratio patterns
mr-I 9000M for micro and nanofabrication
Non-polar thermoplastic for permanent applications.
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Volume Resistivity: < 1.0 x 10-3 Ω-cm
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Volume Resistivity: < 1.0 x 1014 Ω-cm
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Surface Resistivity: @25°C 5.0 x 1015 Ω/square
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Surface Resistivity: @25°C 5.0 x 1015 Ω/square/mil
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Surface Resistivity: @25°C 3.8 x 1014 Ω/square/mil
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Volume Resistivity: > 1 x 1014 Ω-cm
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Kayaku Advanced Materials, Inc. is the AGFA-approved reseller of OrgaCon™ Transparent Conductive Inks in the U.S.A. & Canada. OrgaCon screen-printable inks are based on conductive polymer PEDOT/PSS patterning of transparent conductive structures from plain down to a resolution of 100 microns on flexible and rigid substrates such as PET, PC, PMMA, PI and glass. These inks can achieve excellent characteristics such as flexibility and formability for electrodes of electroluminescent lamps, capacitive touch sensors and membrane switches. OrgaCon transparent conductive inks eliminate the need for ITO and provide flexibility not found using ITO.
Kayaku Advanced Materials, Inc.is your source for conductive & resistive inks, dielectrics, epoxies and more.
Surface Resistivity: @25°C 3.8 x 1014 Ω/square/mil
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Surface Resistivity: 5.0 x 1015 Ω/square
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UV-curable hybrid polymer for ink-jet printing of optical micro patterns
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Surface Resistivity: 2.9 x 1013 Ω/square
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Kayaku Advanced Materials, Inc. is the AGFA-approved reseller of OrgaCon™ Transparent Conductive Inks in the U.S.A. & Canada. OrgaCon screen-printable inks are based on conductive polymer PEDOT/PSS patterning of transparent conductive structures from plain down to a resolution of 100 microns on flexible and rigid substrates such as PET, PC, PMMA, PI and glass. These inks can achieve excellent characteristics such as flexibility and formability for electrodes of electroluminescent lamps, capacitive touch sensors and membrane switches. OrgaCon transparent conductive inks eliminate the need for ITO and provide flexibility not found using ITO.
Kayaku Advanced Materials, Inc.is your source for conductive & resistive inks, dielectrics, epoxies and more.
Volume Resistivity: < 1.0 x 10-3 Ω-cm
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Surface Resistivity: @25°C 5.0 x 1015 Ω/square
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Surface Resistivity: @25°C 5.0 x 1015 Ω/square/mil
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Surface Resistivity: @25°C 3.8 x 1014 Ω/square/mil
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Volume Resistivity: < 1.0 x 10-3 Ω-cm
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Surface Resistivity: @25°C 5.0 x 1015 Ω/square
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Features:
Surface Resistivity: @25°C 5.0 x 1015 Ω/square/mil
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Surface Resistivity: @25°C 3.8 x 1014 Ω/square/mil
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Volume Resistivity: < 1.0 x 10-3 Ω-cm
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Features:
Surface Resistivity: @25°C 3.8 x 1014 Ω/square/mil
Applications:
Features:
Applications:
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Applications:
Features:
Kayaku Advanced Materials, Inc. is the AGFA-approved reseller of OrgaCon™ Transparent Conductive Inks in the U.S.A. & Canada. OrgaCon screen-printable inks are based on conductive polymer PEDOT/PSS patterning of transparent conductive structures from plain down to a resolution of 100 microns on flexible and rigid substrates such as PET, PC, PMMA, PI and glass. These inks can achieve excellent characteristics such as flexibility and formability for electrodes of electroluminescent lamps, capacitive touch sensors and membrane switches. OrgaCon transparent conductive inks eliminate the need for ITO and provide flexibility not found using ITO.
Kayaku Advanced Materials, Inc.is your source for conductive & resistive inks, dielectrics, epoxies and more.
Volume Resistivity: < 1.0 x 10-3 Ω-cm
Applications:
Features:
Surface Resistivity: @25°C 3.8 x 1014 Ω/square/mil
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