StructSure™
Photoresists & Specialty Chemicals
Photoresists & Specialty Chemicals
UniLOR® N Single-layer Lift-off Photoresists
Part of the Kayaku Advanced Materials Line
UniLOR® N are chemically amplified, negative-tone resists for single layer lift-off processes.
Material Attributes: |
- Negative tone, chemically amplified resists
- 1 to 5 µm film thickness range
- i-Line/Broadband sensitivity, 1:1 aspect ratio capability
- Adjustable sidewall profile angle
- Aqueous alkaline development (standard 0.26N TMAH developers)
- Suitable for metal evaporation physical vapor deposition processes
- Pattern thermal stability up to 200°C
- Clean removal with standard photoresist removal chemistries
- Suitable as top imaging resist in bi-layer lift-off processes
Lithography Process
| Wafer Preparation | HMDS vapor priming (Si wafer) |
| Spin Coating | 1000 to 4000 rpm/40 seconds |
| Film Thickness | 1 to 5 µm |
| Soft Bake | 115°C, 2 minutes (hot plate) |
| Exposure | 260 mJ/cm2 for 3 µm film thickness (adjustable)
ABM Broadband aligner with 360 nm long pass filter Intensity measured at 365 nm |
| PEB | 120°C, 2 minutes (hot plate) |
| Development | Spray develop with 0.26N TMAH Developer 1 x 45 seconds puddle |
Wall Profile Adjustment through Exposure Dose and PEB
High Temperature Bi-Layer Lift-off Processes
6 µm L/S – 2 µm UniLOR® N on top of 0.5 µm LOR C
1.98 µm undercut
6 µm L/S – 1.5 µm UniLOR® N on top of 0.5 µm LOR C
2.1 µm undercut
Single Layer Lift-off Deposition
