TempKoat™ P Positive Temporary Photoresist

TempKoat™ P is a chemically amplified, positive-tone resist series for advanced packaging and MEMS applications.

TempKoat™ P 20 is the first dilution available in the TempKoat™ P series.


Material Attributes:

  • Positive tone, chemically amplified resist
  • 10 to 40 µm film thickness in a single coat
  • I-Line/broadband sensitivity, 3:1 achievable aspect ratio
  • No rehydration or latency delay
  • Aqueous alkaline development (standard 0.26N TMAH)
  • Excellent chemical resistance and residue-free removal

Material Uses:

  • Electroplating
  • RDL
  • Microbumping

Lithography Process for TempKoat™ P 20

Substrate150 mm Cu wafer
Spin Speed2000 rpm/30 seconds
Film Thickness20 µm
Soft Bake120°C, 3 minutes (hot plate)
EBR~ 1.5 mm removal with EBR PG

500 rpm, 30 second

+ 65˚C for 1 minute (hot plate)

Exposure350 mJ/cm2

ABM Broadband aligner with 360 nm long pass filter

Intensity measured at 365 nm

PEB95°C, 2 minutes
DevelopmentSpray develop with 0.26N TMAH Developer
4 x 60 seconds puddle
20 µm L/S in 20 µm thick resist
5 µm vias in 20 µm thick resist

Cu Plating Process for TempKoat™ P 20

Surface Prep.O2 Plasma

80SCCM, 350W, 3 minutes

Technic Elevate® Cu 6300 Cleaner (or equivalent)

Room Temperature,1.5 minutes, Shaker Table

PlatingTechnic Elevate® Cu 6388

I = 0.83A, 16.67 minutes, 80˚F

Resist RemovalNMP-based remover (Remover PG)

Immersion and agitation for 15 minutes at ambient

100 µm Cu posts plated to 20 µm
before resist removal

 

100 µm Cu posts plated to 20 µm
after resist removal
20 µm plated Cu L/S in 32 µm thick resist