Products by Applications
Advanced Packaging
- Dielectric Layer
- ~ 3-10 µm film thickness
- No warpage due to low shrinkage and low tensile modulus
- Solvent-developable in Cyclopentanone
- i-Line/broadband sensitivity, 1:1 aspect ratio imaging
- Low temperature cure < 200°C
- Good electrical properties
- Low moisture uptake
- High thermal and chemical stability
- EBR PG
- KMSF® Developer
- Stress buffer
- Passivation and protective layer
- Negative tone, photoimageable dielectric
- 5 to 10 µm film thickness after cure
- Solvent-developable in PGMEA
- i-Line/broadband sensitivity, 1:1 aspect ratio imaging
- Low temperature cure ≤ 200°C
- Low Dk/Df electrical properties
- Low moisture uptake
- Good thermal and chemical stability
- EBR PG
- SU-8 Developer
- RDL
- Passivation and protective layer
- Wafer level packaging
- Electrodeposition
- Coating thickness capability from 2-10 µm
- Provides uniform, defect free coating
- Exposure at i-Line (365-405) wavelength
- DuPont Developers
- DuPont Removers
- Coating thickness capability up to 12.5 microns
- Provides uniform, defect free coating
- Resolution capability of 1:1
- DuPont Developers
- DuPont Removers
- Plating
- 10 to 40 µm film thickness in a single coat
- i-Line/broadband sensitivity, 3:1 achievable aspect ratio
- Aqueous alkaline development (standard 0.26N TMAH)
- Excellent chemical resistance and residue-free removal
- EBR PG
- CD-26 Developer
- MF-26A Developer
- MF-319 Developer
- MicroChem 303 A Developer
- Remover PG
- Electroplating
- RDL
- Microbumping
- 7 to 20 µm film thickness in a single coat
- i-Line/broadband sensitivity, 2:1 achievable aspect ratio
- Aqueous alkaline development (standard 0.26N TMAH)
- Excellent resistance to copper plating chemistries
- Residue-free removal
- EBR PG
- CD-26 Developer
- MF-26A Developer
- MF-319 Developer
- INTERVIA™ 2011 Remover
- Remover PG
- Electroplating
- RDL
- Microbumping
- > 100 µm film thickness in a single coat
- High aspect ratio with vertical sidewalls
- Chemical and plasma resistance
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- DRIE
- Micro Molds & Stamps
- Plating: Thick negative Resists
- Electrowetting
- Dielectric Layers
- HAR Micro-plated Structures
- Film Thickness 1-30 µm
- Broadband, g-Line and i-Line capable
- Excellent wet and dry etch adhesion
- HAR Micro-plated Structures
- Bi layer lift-off
- Dry etch
- Plating: Thick positive resists
- Wet etch
- Microlenses
- DRIE
- Variety of viscosities for 0.3 – 40 μm film thickness in one spin-coating step
- Broadband, g-, h- and i-Line exposure
- Very good pattern stability in wet etch processes & acid & alkaline plating baths
- Highly stable in dry etch processes, e.g. CHF3, CF4, SF6
- MRT Developers
- MF-26A Developer
- Remover PG
- Remover 1112A
- MRT Removers
- Dry etch
- Mould for electroplating
- Wet etch
- Fabrication of micro lenses through pattern transfer of reflowed resist
- Up to 60 µm film thickness
- High stability in acid and alkaline plating baths
- High dry and wet etch resistance
- Side wall angle up to 87° with mask aligner broadband exposure
- MF-26A Developer
- MRT Developers
- Remover 1165
- EBR-10A Edge Bead Remover
- MRT Removers
- Plating: Thick positive resists
- Microlenses
III-Vs, Optoelectronics
- Airbridges
- High thermal stability: Tg ∼190°C
- Enables sub 0.25µm bi-layer resist imaging
- Single step development of bi-layer stack in TMAH or KOH developers
- MCC Developers
- Remover PG
- MCC Thinner
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Dielectric Layers
- Excellent resolution
- Excellent chemical resistance, electrical, thermal, and mechanical properties
- Wide processing windows
- DuPont Developers
- Low moisture absorption
- Low temperature cure
- Excellent planarization
- Primers
- DuPont Developers
- Low moisture absorption
- Low temperature cure
- Excellent planarization
- i-line, g-line, and broadband-sensitive
- Excellent dielectric properties
- No interaction with common lithography solvents
- Primers
- DuPont Developers
- Microlenses
- High thermal stability: Tg ∼190°C
- Enables sub 0.25µm bi-layer resist imaging
- Single step development of bi-layer stack in TMAH or KOH developers
- MCC Developers
- Remover PG
- MCC Thinner
- EBR-PG
- E-beam and X-ray imageable
- Wide range of film thicknesses
- Excellent adhesion to most substrates
- MCC Developers
- MIBK:IPA
- Remover PG
- MCC Thinner
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Film Thickness 1-30 µm
- Broadband, g-Line and i-Line capable
- Excellent wet and dry etch adhesion
- HAR Micro-plated Structures
- Bi layer lift-off
- Dry etch
- Plating: Thick positive resists
- Wet etch
- Microlenses
- DRIE
- For UV imprint and UV moulding
- Highly transparent for near UV and VIS down to 350 nm
- High thermal and mechanical stability
- Thickness up to 270 μm by spin coating (OrmoClear®30)
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Micro & nano components
- UV patterning (lithography, moulding and imprint)
- Highly transparent for VIS and near UV down to 350 nm
- High thermal, chemical and mechanical stability of cured patterns
- High resolution down to 100 nm feature size
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Microfluidics
- UV-based NIL
- Permanent Applications
- Micro and nano-optical components
- Variety of viscosities for 0.3 – 40 μm film thickness in one spin-coating step
- Broadband, g-, h- and i-Line exposure
- Very good pattern stability in wet etch processes & acid & alkaline plating baths
- Highly stable in dry etch processes, e.g. CHF3, CF4, SF6
- MRT Developers
- MF-26A Developer
- Remover PG
- Remover 1112A
- MRT Removers
- Dry etch
- Mould for electroplating
- Wet etch
- Fabrication of micro lenses through pattern transfer of reflowed resist
- Up to 60 µm film thickness
- High stability in acid and alkaline plating baths
- High dry and wet etch resistance
- Side wall angle up to 87° with mask aligner broadband exposure
- MF-26A Developer
- MRT Developers
- Remover 1165
- EBR-10A Edge Bead Remover
- MRT Removers
- Plating: Thick positive resists
- Microlenses
- Passivation
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- T-gates
- High thermal stability: Tg ∼190°C
- Enables sub 0.25µm bi-layer resist imaging
- Single step development of bi-layer stack in TMAH or KOH developers
- MCC Developers
- Remover PG
- MCC Thinner
- EBR-PG
- E-beam and X-ray imageable
- Wide range of film thicknesses
- Excellent adhesion to most substrates
- MCC Developers
- MIBK:IPA
- Remover PG
- MCC Thinner
- EBR-PG
- Waveguides
- E-beam and X-ray imageable
- Wide range of film thicknesses
- Excellent adhesion to most substrates
- MCC Developers
- MIBK:IPA
- Remover PG
- MCC Thinner
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- UV patterning of core and cladding
- High transmittance @ 850 nm
- High heat and pressure resistance
- OrmoDev
- OrmoPrime®08
- OrmoThin
- UV patterning (lithography/moulding)
- Exposure: i-line, broadband
- Thermally stable up to 270°C
- Low optical loss
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Wafer Thinning
- E-beam and X-ray imageable
- Wide range of film thicknesses
- Excellent adhesion to most substrates
- MCC Developers
- MIBK:IPA
- Remover PG
- MCC Thinner
- EBR-PG
MEMS
- C-MEMS, C-NEMS
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Photo-imageable thin films with high resolution i-line patterning capability
- Broadband, i-line, g-line and h-line sensitivity
- Low temperature cure (< 150°C)
- Highly uniform thin films
- Cantilevers
- C-MEMS, C-Nems
- Micro Molds & Stamps
- DRIE
- Micro & Nano Components
- Microwell Arrays
- Waveguides
- Cantilevers
- High thermal stability: Tg ∼190°C
- Enables sub 0.25µm bi-layer resist imaging
- Single step development of bi-layer stack in TMAH or KOH developers
- MCC Developers
- Remover PG
- MCC Thinner
- EBR-PG
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Photo-imageable thin films with high resolution i-line patterning capability
- Broadband, i-line, g-line and h-line sensitivity
- Low temperature cure (< 150°C)
- Highly uniform thin films
- Cantilevers
- C-MEMS, C-Nems
- Micro Molds & Stamps
- DRIE
- Micro & Nano Components
- Microwell Arrays
- Waveguides
- DRIE
- > 100 µm film thickness in a single coat
- High aspect ratio with vertical sidewalls
- Chemical and plasma resistance
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- DRIE
- Micro Molds & Stamps
- Plating: Thick negative Resists
- Electrowetting
- Dielectric Layers
- HAR Micro-plated Structures
- Film Thickness 1-30 µm
- Broadband, g-Line and i-Line capable
- Excellent wet and dry etch adhesion
- HAR Micro-plated Structures
- Bi layer lift-off
- Dry etch
- Plating: Thick positive resists
- Wet etch
- Microlenses
- DRIE
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
- Variety of viscosities for 0.3 – 40 μm film thickness in one spin-coating step
- Broadband, g-, h- and i-Line exposure
- Very good pattern stability in wet etch processes & acid & alkaline plating baths
- Highly stable in dry etch processes, e.g. CHF3, CF4, SF6
- MRT Developers
- MF-26A Developer
- Remover PG
- Remover 1112A
- MRT Removers
- Dry etch
- Mould for electroplating
- Wet etch
- Fabrication of micro lenses through pattern transfer of reflowed resist
- Direct Write Laser Lithography
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
- Sensitive above 400 nm, for direct writing laser @ 405 nm
- High thermal and chemical stability
- High wet and dry etch stability
- MRT Removers
- Remover PG
- mr-Dev 600
- Direct Writing Lithography
- Film thickness from 1 µm up to 60 µm and higher
- High intensity laser exposure possible without out-gassing
- 50-60 µm depth range of patterns
- MRT Developers
- Remover PG
- MF-26A Developer
- MRT Removers
- Grayscale
- LIGA
- E-beam and X-ray imageable
- Wide range of film thicknesses
- Excellent adhesion to most substrates
- MCC Developers
- MIBK:IPA
- Remover PG
- MCC Thinner
- EBR-PG
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
- Micro Molds and Stamps
- > 100 µm film thickness in a single coat
- High aspect ratio with vertical sidewalls
- Chemical and plasma resistance
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- DRIE
- Micro Molds & Stamps
- Plating: Thick negative Resists
- Electrowetting
- Dielectric Layers
- HAR Micro-plated Structures
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Highly transparent for UV and visible light
- Mechanically and thermally stable
- Excellent pattern transfer down to sub-100 nm features
- Transparent working stamp fabrication
- Cost efficient alternative to quartz stamp
- UV-based and thermal imprinting, nanoimprint lithography
- Microfluidics
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Photo-imageable thin films with high resolution i-line patterning capability
- Broadband, i-line, g-line and h-line sensitivity
- Low temperature cure (< 150°C)
- Highly uniform thin films
- Cantilevers
- C-MEMS, C-Nems
- Micro Molds & Stamps
- DRIE
- Micro & Nano Components
- Microwell Arrays
- Waveguides
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
- UV patterning (lithography, moulding and imprint)
- Highly transparent for VIS and near UV down to 350 nm
- High thermal, chemical and mechanical stability of cured patterns
- High resolution down to 100 nm feature size
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Microfluidics
- UV-based NIL
- Permanent Applications
- Micro and nano-optical components
- Highly transparent for UV and visible light
- Mechanically and thermally stable
- Excellent pattern transfer down to sub-100 nm features
- Transparent working stamp fabrication
- Cost efficient alternative to quartz stamp
- UV-based and thermal imprinting, nanoimprint lithography
- Microwell Arrays
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Photo-imageable thin films with high resolution i-line patterning capability
- Broadband, i-line, g-line and h-line sensitivity
- Low temperature cure (< 150°C)
- Highly uniform thin films
- Cantilevers
- C-MEMS, C-Nems
- Micro Molds & Stamps
- DRIE
- Micro & Nano Components
- Microwell Arrays
- Waveguides
- Surface Modification
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Wafer Bonding
- Low temperature processing (< 200°C)
- High quality, void free bonding
- i-line exposure
- Superb adhesion to silicon and glass
- EBR-PG
- PN 1000 Developer
- Permanent Wafer Bonding
Optical Components
- Micro & Nano Components
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Photo-imageable thin films with high resolution i-line patterning capability
- Broadband, i-line, g-line and h-line sensitivity
- Low temperature cure (< 150°C)
- Highly uniform thin films
- Cantilevers
- C-MEMS, C-Nems
- Micro Molds & Stamps
- DRIE
- Micro & Nano Components
- Microwell Arrays
- Waveguides
- For UV imprint and UV moulding
- Highly transparent for near UV and VIS down to 350 nm
- High thermal and mechanical stability
- Thickness up to 270 μm by spin coating (OrmoClear®30)
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Micro & nano components
- UV patterning (lithography, moulding and imprint)
- Highly transparent for VIS and near UV down to 350 nm
- High thermal, chemical and mechanical stability of cured patterns
- High resolution down to 100 nm feature size
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Microfluidics
- UV-based NIL
- Permanent Applications
- Micro and nano-optical components
- Waveguides
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Photo-imageable thin films with high resolution i-line patterning capability
- Broadband, i-line, g-line and h-line sensitivity
- Low temperature cure (< 150°C)
- Highly uniform thin films
- Cantilevers
- C-MEMS, C-Nems
- Micro Molds & Stamps
- DRIE
- Micro & Nano Components
- Microwell Arrays
- Waveguides
- UV patterning of core and cladding
- High transmittance @ 850 nm
- High heat and pressure resistance
- OrmoDev
- OrmoPrime®08
- OrmoThin
- UV patterning (lithography/moulding)
- Exposure: i-line, broadband
- Thermally stable up to 270°C
- Low optical loss
- OrmoDev
- OrmoPrime®08
- OrmoThin
Medical Devices
- Microfluidics
- Film thickness: 1-200 µm
- High aspect ratio imaging with near vertical side walls
- Near UV (350-400nm) processing
- SU-8 Developer
- Remover PG
- EBR-PG
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Photo-imageable thin films with high resolution i-line patterning capability
- Broadband, i-line, g-line and h-line sensitivity
- Low temperature cure (< 150°C)
- Highly uniform thin films
- Cantilevers
- C-MEMS, C-Nems
- Micro Molds & Stamps
- DRIE
- Micro & Nano Components
- Microwell Arrays
- Waveguides
Display
- Dielectric layers
- > 100 µm film thickness in a single coat
- High aspect ratio with vertical sidewalls
- Chemical and plasma resistance
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- DRIE
- Micro Molds & Stamps
- Plating: Thick negative Resists
- Electrowetting
- Dielectric Layers
- HAR Micro-plated Structures
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- Electrowetting (pixel grids)
- > 100 µm film thickness in a single coat
- High aspect ratio with vertical sidewalls
- Chemical and plasma resistance
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- DRIE
- Micro Molds & Stamps
- Plating: Thick negative Resists
- Electrowetting
- Dielectric Layers
- HAR Micro-plated Structures
- Film thickness: <1-100 µm
- >10:1 aspect ratio
- Faster drying
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
General Lithography
- Bi-Layer Lift-off
- High thermal stability: Tg ∼190°C
- Enables sub 0.25µm bi-layer resist imaging
- Single step development of bi-layer stack in TMAH or KOH developers
- MCC Developers
- Remover PG
- MCC Thinner
- EBR-PG
- 1 to 5 µm film thickness range
- i-Line/Broadband sensitivity, 1:1 aspect ratio capability
- Adjustable sidewall profile angle
- Aqueous alkaline development (standard 0.26N TMAH developers)
- Pattern thermal stability up to 200°C
- Clean removal
- EBR PG
- CD-26 Developer
- MF-319 Developer
- Remover PG
- INTERVIA™ 2011 Remover
- Single-layer Lift-off
- Bi-layer Lift-off
- Deposition patterning of insulator layers
- Sub-micron lift-off capability
- Compatible with g-, h-, and i-Line and 193 nm photoresists
- Excellent adhesion to thin film head and semiconductor substrates
- DuPont Developers
- Remover 1165
- Bi layer lift-off
- Film Thickness 1-30 µm
- Broadband, g-Line and i-Line capable
- Excellent wet and dry etch adhesion
- HAR Micro-plated Structures
- Bi layer lift-off
- Dry etch
- Plating: Thick positive resists
- Wet etch
- Microlenses
- DRIE
- Cellosolve™ acetate and xylene-free
- Excellent adhesion and coating uniformity
- Optimized for g-Line exposure
- MCC Developers
- Remover PG
- Remover 1112A
- MF-319 Developer
- M-351 Developer
- Remover 1165
- EBR-10A Edge Bead Remover
- MicroChem 303A Developer
- MicroChem 452 Developer
- MicroChem 455 Developer
- Bi layer lift-off
- Wet etch
- Dense lines/spaces and isolated lines on polysilicon, and in high-aspect ratio films on TiN
- Contact holes on oxide
- Fast photospeed
- Remover PG
- Remover 1112A
- MF® CD-26 Developer
- MF-26A Developer
- Remover 1165
- EBR-10A Edge Bead Remover
- Bi layer lift-off
- High resolution i-Line
- Dry Etch
- > 100 µm film thickness in a single coat
- High aspect ratio with vertical sidewalls
- Chemical and plasma resistance
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- DRIE
- Micro Molds & Stamps
- Plating: Thick negative Resists
- Electrowetting
- Dielectric Layers
- HAR Micro-plated Structures
- Film Thickness 1-30 µm
- Broadband, g-Line and i-Line capable
- Excellent wet and dry etch adhesion
- HAR Micro-plated Structures
- Bi layer lift-off
- Dry etch
- Plating: Thick positive resists
- Wet etch
- Microlenses
- DRIE
- Glycol ether- and xylene-free solvent system
- Excellent adhesion
- Superior coating uniformity
- Remover PG
- Remover 1112A
- MF-26A Developer
- M-351 Developer
- Remover 1165
- EBR-10A Edge Bead Remover
- Dry etch
- Variety of viscosities for 0.3 – 40 μm film thickness in one spin-coating step
- Broadband, g-, h- and i-Line exposure
- Very good pattern stability in wet etch processes & acid & alkaline plating baths
- Highly stable in dry etch processes, e.g. CHF3, CF4, SF6
- MRT Developers
- MF-26A Developer
- Remover PG
- Remover 1112A
- MRT Removers
- Dry etch
- Mould for electroplating
- Wet etch
- Fabrication of micro lenses through pattern transfer of reflowed resist
- E-beam Lithography
- E-beam and X-ray imageable
- Wide range of film thicknesses
- Excellent adhesion to most substrates
- MCC Developers
- MIBK:IPA
- Remover PG
- MCC Thinner
- EBR-PG
- Aqueous alkaline development
- High resolution capability (~ 40 – 50 nm)
- High wet and dry etch resistance
- Easy to remove
- Remover PG
- MRT Developers
- MRT Removers
- ma-D 525
- E-beam Lithography
- Negative DUV/e-beam
- Electrodeposition
- Coating thickness capability from 2-10 µm
- Provides uniform, defect free coating
- Exposure at i-Line (365-405) wavelength
- DuPont Developers
- DuPont Removers
- Coating thickness capability up to 12.5 microns
- Provides uniform, defect free coating
- Resolution capability of 1:1
- DuPont Developers
- DuPont Removers
- Grayscale
- Film thickness from 1 µm up to 60 µm and higher
- High intensity laser exposure possible without out-gassing
- 50-60 µm depth range of patterns
- MRT Developers
- Remover PG
- MF-26A Developer
- MRT Removers
- Grayscale
- High Resolution i-Line
- Dense lines/spaces and isolated lines on polysilicon, and in high-aspect ratio films on TiN
- Contact holes on oxide
- Fast photospeed
- Remover PG
- Remover 1112A
- MF® CD-26 Developer
- MF-26A Developer
- Remover 1165
- EBR-10A Edge Bead Remover
- Bi layer lift-off
- High resolution i-Line
- Broadband, g-Line and i-Line capable
- Thermal stability ≥125°C
- Compatible across a wide variety of developer families
- Remover PG
- Remover 1112A
- MF® CD-26 Developer
- Remover 1165
- EBR-10A Edge Bead Remover
- High resolution i-Line
- Negative DUV/e-beam
- Aqueous alkaline development
- High resolution capability (~ 40 – 50 nm)
- High wet and dry etch resistance
- Easy to remove
- Remover PG
- MRT Developers
- MRT Removers
- ma-D 525
- E-beam Lithography
- Negative DUV/e-beam
- Negative DUV Resists
- Low iso-dense bias
- Maximum isolated film retention to <110 nm
- Compatible with PSM & OPC assist features to enlarge process windows
- CD-26 Developer
- MF-26 Developer
- Remover 1165
- 150 -180 nm nodes high etch resistance
- Aqueous alkaline development
- High resolution capability (~ 40 – 50 nm)
- High wet and dry etch resistance
- Easy to remove
- Remover PG
- MRT Developers
- MRT Removers
- ma-D 525
- E-beam Lithography
- Negative DUV/e-beam
- Plating: Thick Negative Resists
- 7 to 20 µm film thickness in a single coat
- i-Line/broadband sensitivity, 2:1 achievable aspect ratio
- Aqueous alkaline development (standard 0.26N TMAH)
- Excellent resistance to copper plating chemistries
- Residue-free removal
- EBR PG
- CD-26 Developer
- MF-26A Developer
- MF-319 Developer
- INTERVIA™ 2011 Remover
- Remover PG
- Electroplating
- RDL
- Microbumping
- > 100 µm film thickness in a single coat
- High aspect ratio with vertical sidewalls
- Chemical and plasma resistance
- SU-8 Developer
- Remover PG
- MCC Thinner
- EBR-PG
- DRIE
- Micro Molds & Stamps
- Plating: Thick negative Resists
- Electrowetting
- Dielectric Layers
- HAR Micro-plated Structures
- Single-spin film thickness >100 microns
- Near vertical side walls
- Excellent adhesion to all WLP substrates; excellent chemical resistance.
- DuPont Developers
- DuPont Removers
- Plating: Thick negative resists
- Plating: Thick Positive Resists
- 10 to 40 µm film thickness in a single coat
- i-Line/broadband sensitivity, 3:1 achievable aspect ratio
- Aqueous alkaline development (standard 0.26N TMAH)
- Excellent chemical resistance and residue-free removal
- EBR PG
- CD-26 Developer
- MF-26A Developer
- MF-319 Developer
- MicroChem 303 A Developer
- Remover PG
- Electroplating
- RDL
- Microbumping
- Film Thickness 1-30 µm
- Broadband, g-Line and i-Line capable
- Excellent wet and dry etch adhesion
- HAR Micro-plated Structures
- Bi layer lift-off
- Dry etch
- Plating: Thick positive resists
- Wet etch
- Microlenses
- DRIE
- Variety of viscosities for 0.3 – 40 μm film thickness in one spin-coating step
- Broadband, g-, h- and i-Line exposure
- Very good pattern stability in wet etch processes & acid & alkaline plating baths
- Highly stable in dry etch processes, e.g. CHF3, CF4, SF6
- MRT Developers
- MF-26A Developer
- Remover PG
- Remover 1112A
- MRT Removers
- Dry etch
- Mould for electroplating
- Wet etch
- Fabrication of micro lenses through pattern transfer of reflowed resist
- Up to 60 µm film thickness
- High stability in acid and alkaline plating baths
- High dry and wet etch resistance
- Side wall angle up to 87° with mask aligner broadband exposure
- MF-26A Developer
- MRT Developers
- Remover 1165
- EBR-10A Edge Bead Remover
- MRT Removers
- Plating: Thick positive resists
- Microlenses
- Positive DUV Resists
- Superior etch resistance
- Wide process window
- 150° thermal stability
- MF® CD-26 Developer
- EBR-10A Edge Bead Remover
- Remover 1165
- Positive DUV Resists
- Low viscosity allows for reduced dispense volume
- Improved coating uniformity for films ranging from 1.1 µm to 3.0 µm
- 150°C thermal stability
- MF® CD-26 Developer
- Remover 1165
- EBR-10A Edge Bead Remover
- Positive DUV Resists
- Low iso-dense bias
- Maximum isolated film retention to <110 nm
- Compatible with PSM & OPC assist features to enlarge process windows
- AR 3 BARC
- CD-26 Developer
- MF-26 Developer
- Remover 1165
- 130 nm device node
- Compatible with a wide range of substrates including silicon and both organic and inorganic antireflective materials
- 150°C thermal stability
- MF® CD-26 Developer
- EBR-10A Edge Bead Remover
- Remover 1165
- Positive DUV Resists
- Single Layer Lift-Off
- 1 to 5 µm film thickness range
- i-Line/Broadband sensitivity, 1:1 aspect ratio capability
- Adjustable sidewall profile angle
- Aqueous alkaline development (standard 0.26N TMAH developers)
- Pattern thermal stability up to 200°C
- Clean removal
- EBR PG
- CD-26 Developer
- MF-319 Developer
- Remover PG
- INTERVIA™ 2011 Remover
- Single-layer Lift-off
- Bi-layer Lift-off
- Deposition patterning of insulator layers
- High wet and dry etch resistance
- Good thermal stability of the resist pattern
- Tunable pattern profile: vertical to undercut
- MRT Developers
- Remover PG
- MRT Removers
- Single layer lift-off
- Wet Etch
- Film Thickness 1-30 µm
- Broadband, g-Line and i-Line capable
- Excellent wet and dry etch adhesion
- HAR Micro-plated Structures
- Bi layer lift-off
- Dry etch
- Plating: Thick positive resists
- Wet etch
- Microlenses
- DRIE
- Cellosolve™ acetate and xylene-free
- Excellent adhesion and coating uniformity
- Optimized for g-Line exposure
- MCC Developers
- Remover PG
- Remover 1112A
- MF-319 Developer
- M-351 Developer
- Remover 1165
- EBR-10A Edge Bead Remover
- MicroChem 303A Developer
- MicroChem 452 Developer
- MicroChem 455 Developer
- Bi layer lift-off
- Wet etch
- Variety of viscosities for 0.3 – 40 μm film thickness in one spin-coating step
- Broadband, g-, h- and i-Line exposure
- Very good pattern stability in wet etch processes & acid & alkaline plating baths
- Highly stable in dry etch processes, e.g. CHF3, CF4, SF6
- MRT Developers
- MF-26A Developer
- Remover PG
- Remover 1112A
- MRT Removers
- Dry etch
- Mould for electroplating
- Wet etch
- Fabrication of micro lenses through pattern transfer of reflowed resist
Nanoimprint Lithography
- For UV imprint and UV moulding
- Highly transparent for near UV and VIS down to 350 nm
- High thermal and mechanical stability
- Thickness up to 270 μm by spin coating (OrmoClear®30)
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Micro & nano components
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
- Excellent film quality on various substrate materials
- Very low residual layer thickness < 10 nm
- Excellent pattern transfer fidelity
- Thermal NIL
- Pattern Transfer
- UV-based
- NIL Pattern transfer
- Increased dry etching resistance in demanding plasma processes
- Excellent reproducibility enabling high volume production
- Film thickness adjustable from sub 100 nm range up to several microns
- UV-based NIL
- Pattern Transfer
- Excellent stability in plasma etching processes
- Fast curing even with low intensity light exposure sources
- Excellent liquid thin film stability and thin film quality
- Outstanding compatibility with flexible stamp materials
- Residue-free removal with oxygen plasma post-cure
- Soft UV-based NIL
- Etch mask for pattern transfer processes (dry and wet etching)
- Fabrication of nanostructures
- Very low release forces
- Excellent wetting properties
- Fast curing, high resolution
- mr-APS1 Adhesion Promoter
- ma-T 1050 Thinner
- UV-based NIL
- Pattern Transfer
- Micro/nano high aspect ratio patterning
- UV patterning (lithography, moulding and imprint)
- Highly transparent for VIS and near UV down to 350 nm
- High thermal, chemical and mechanical stability of cured patterns
- High resolution down to 100 nm feature size
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Microfluidics
- UV-based NIL
- Permanent Applications
- Micro and nano-optical components
- Highly transparent for UV and visible light
- Mechanically and thermally stable
- Excellent pattern transfer down to sub-100 nm features
- Transparent working stamp fabrication
- Cost efficient alternative to quartz stamp
- UV-based and thermal imprinting, nanoimprint lithography
- Solvent-free, low viscosity
- Excellent imprint characteristics
- Compatibility to various mold materials (Ni, Si, OrmoStamp®)
- Good adhesion to PC and PET substrates
- Excellent dry-etch resistance for pattern transfer
- UV-based NIL
- Pattern Transfer
- Permanent Applications
- Mold Replication
- Highly transparent for UV and visible light
- Mechanically and thermally stable
- Excellent pattern transfer down to sub-100 nm features
- Transparent working stamp fabrication
- Cost efficient alternative to quartz stamp
- UV-based and thermal imprinting, nanoimprint lithography
- Pattern Transfer
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
- Excellent film quality on various substrate materials
- Very low residual layer thickness < 10 nm
- Excellent pattern transfer fidelity
- Thermal NIL
- Pattern Transfer
- UV-based
- NIL Pattern transfer
- Increased dry etching resistance in demanding plasma processes
- Excellent reproducibility enabling high volume production
- Film thickness adjustable from sub 100 nm range up to several microns
- UV-based NIL
- Pattern Transfer
- Excellent stability in plasma etching processes
- Fast curing even with low intensity light exposure sources
- Excellent liquid thin film stability and thin film quality
- Outstanding compatibility with flexible stamp materials
- Residue-free removal with oxygen plasma post-cure
- Soft UV-based NIL
- Etch mask for pattern transfer processes (dry and wet etching)
- Fabrication of nanostructures
- Very low release forces
- Excellent wetting properties
- Fast curing, high resolution
- mr-APS1 Adhesion Promoter
- ma-T 1050 Thinner
- UV-based NIL
- Pattern Transfer
- Micro/nano high aspect ratio patterning
- Solvent-free, low viscosity
- Excellent imprint characteristics
- Compatibility to various mold materials (Ni, Si, OrmoStamp®)
- Good adhesion to PC and PET substrates
- Excellent dry-etch resistance for pattern transfer
- UV-based NIL
- Pattern Transfer
- Permanent Applications
- Permanent Applications
- For UV imprint and UV moulding
- Highly transparent for near UV and VIS down to 350 nm
- High thermal and mechanical stability
- Thickness up to 270 μm by spin coating (OrmoClear®30)
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Micro & nano components
- UV patterning (lithography, moulding and imprint)
- Highly transparent for VIS and near UV down to 350 nm
- High thermal, chemical and mechanical stability of cured patterns
- High resolution down to 100 nm feature size
- OrmoDev
- OrmoPrime®08
- OrmoThin
- Microlenses
- Microfluidics
- UV-based NIL
- Permanent Applications
- Micro and nano-optical components
- Highly transparent for UV and visible light
- Mechanically and thermally stable
- Excellent pattern transfer down to sub-100 nm features
- Transparent working stamp fabrication
- Cost efficient alternative to quartz stamp
- UV-based and thermal imprinting, nanoimprint lithography
- Solvent-free, low viscosity
- Excellent imprint characteristics
- Compatibility to various mold materials (Ni, Si, OrmoStamp®)
- Good adhesion to PC and PET substrates
- Excellent dry-etch resistance for pattern transfer
- UV-based NIL
- Pattern Transfer
- Permanent Applications
- Excellent properties for thermal NIL
- Longer life-time of anti-sticking layers on the mold
- High plasma etch resistance
- Thermal NIL
- Pattern Transfer
- Compatible with various substrates including Si, Si02 and Al
- Short imprint cycle
- Thermal curing during imprint
- Thermal NIL
- Pattern Transfer
- Permanent Applications
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
- Excellent flowability
- Superior demolding characteristics
- Imprints can be performed at moderate temperatures in the range of 110 – 140°C.
- Thermal NIL
- Pattern Transfer
- Pattern Transfer
- Excellent properties for thermal NIL
- Longer life-time of anti-sticking layers on the mold
- High plasma etch resistance
- Thermal NIL
- Pattern Transfer
- Compatible with various substrates including Si, Si02 and Al
- Short imprint cycle
- Thermal curing during imprint
- Thermal NIL
- Pattern Transfer
- Permanent Applications
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
- Excellent flowability
- Superior demolding characteristics
- Imprints can be performed at moderate temperatures in the range of 110 – 140°C.
- Thermal NIL
- Pattern Transfer
- Permanent Applications
- Compatible with various substrates including Si, Si02 and Al
- Short imprint cycle
- Thermal curing during imprint
- Thermal NIL
- Pattern Transfer
- Permanent Applications
- High chemical resistance
- Excellent UV-vis transparency
- Film thickness up to 5 µm possible for the fabrication of microfluidic & lab-on-chip devices
- Appropriate for bio- and lab-on-chip applications
- Thermal NIL
- Lab-on-chip systems
Dielectric Layer Learn More
KMSF® 1000 Low Stress Photo-dielectric
Negative-tone, ultra-low stress photo-patternable dielectric for wafer level packaging.
Data Sheet
Ancillaries
Applications
KMSF® 2000 Low Dk/Df Photo-dielectric
Negative-tone, low temperature cure, low Dk/Df photo-patternable dielectric for wafer level Packaging.
Data Sheet
Ancillaries
Applications
Electrodeposition Learn More
InterVia™ 3D-P Electrophoretic Resists
Negative photoresist emulsion that can be applied onto a wide variety of electrically-conductive substrates by anaphoretic electrodeposition.
Data sheet:
Ancillaries:
Application:
InterVia™ 3D-N Electrophoretic Resists
Negative photoresist emulsion that can be applied onto a wide variety of electrically-conductive substrates by cathodic electrodeposition.
Data sheet:
Ancillaries:
Application:
Plating Learn More
TempKoat™ P 20 Thick Positive Resist
Thick, positive-tone, temporary resist for advanced packaging and MEMS applications.
Data Sheet
Ancillaries
Applications
TempKoat™ N 15 Negative Temporary Photoresist
Thick, negative-tone, temporary resist for advanced packaging and MEMS applications.
Data Sheet
Ancillaries
Applications
KMPR® Permanent Negative Epoxy Resists
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
Data sheet:
Ancillaries:
Applications:
SPR™220 Thick i-Line Resists
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Data sheet:
Ancillaries:
Applications:
ma-P 1200 Positive Resist Series
Photoresist series designed for the use in microelectronics and microsystems technology
Data sheet:
Ancillaries:
Applications:
ma-P 1275 & ma-P 1275HV Thick Positive Resists
Thick photoresists designed for electroplating structures in microsystems technology
Data sheet:
Ancillaries:
Applications:
Airbridges Learn More
PMGI/LOR Lift-off Resists
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
Dielectric Layers
InterVia™ 8023 Photodielectric
For advanced packaging applications:
The InterVia 8023 Series photodielectrics are spin-on deposited, negative tone, TMAH(aq) developable and curable at low temperatures.
Data sheet:
Ancillaries:
Application:
Cyclotene 3000 Dielectrics
Advanced electronic dielectric materials for microelectronic device fabrication.
Data sheet:
Ancillaries:
Application:
CYLOTENE Adhesion Promoter AP3000
Advanced electronic dielectric materials for microelectronic device fabrication.
Data sheet:
Application:
Cyclotene 4000 Dielectrics
Advanced electronic resins developed for use as photoimageable dielectrics in thin film microelectronics applications.
Ancillaries:
Application:
Microlenses Learn More
PMGI/LOR Lift-off Resists
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
Data sheets:
Ancillaries:
Applications:
PMMA and Co-polymer Positive Resists
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
Data sheet:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
SPR™220 Thick i-Line Resists
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Data sheet:
Ancillaries:
Applications:
OrmoClear® Highly Transparent Materials for Micro-optics
Designed for the production of micro-optical components and wafer scale patterning
Data sheet:
Ancillaries:
Applications:
OrmoComp®/OrmoClear®FX UV-curable Hybrid Polymers for Moulding of Optical Components
Designed for the production of micro-optical components produced by UV moulding of optical components
Data sheet:
Ancillaries:
Applications:
ma-P 1200 Positive Resist Series
Photoresist series designed for the use in microelectronics and microsystems technology
Data sheet:
Ancillaries:
Applications:
ma-P 1275 & ma-P 1275HV Thick Positive Resists
Thick photoresists designed for electroplating structures in microsystems technology
Data sheet:
Ancillaries:
Applications:
Passivation Learn More
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
T-gates Learn More
PMGI/LOR Lift-off Resists
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
Data sheets:
Ancillaries:
Applications:
PMMA and Co-polymer Positive Resists
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
Data sheet:
Ancillaries:
Applications:
Waveguides Learn More
PMMA and Co-polymer Positive Resists
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
Data sheet:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
EpoCore/Clad Polymers for Waveguide Fabrication
Resist system for laminated waveguides
Data sheet:
Ancillaries:
Application:
OrmoCore/Clad Photo Patterning Hybrid Polymers
ORMOCER® System for Planar Optical Waveguides
Data sheet:
Ancillaries:
Application:
Wafer Thinning Learn More
PMMA and Co-polymer Positive Resists
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
Data sheet:
Ancillaries:
Applications:
C-MEMS, C-NEMS Learn More
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
SU-8 TF 6000 Negative Resist
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Data Sheet:
Applications:
Cantilevers Learn More
PMGI/LOR Lift-off Resists
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
Data sheets:
Ancillaries:
Applications:
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
SU-8 TF 6000 Negative Resist
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Data Sheet:
Applications:
DRIE Learn More
KMPR® Permanent Negative Epoxy Resists
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
Data sheet:
Ancillaries:
Applications:
SPR™220 Thick i-Line Resists
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
Data sheet:
Ancillaries:
Applications:
mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.
Data sheet:
Applications:
ma-P 1200 Positive Resist Series
Photoresist series designed for the use in microelectronics and microsystems technology
Data sheet:
Ancillaries:
Applications:
Direct Write Laser Lithography
mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.
Data sheet:
Applications:
mr-DWL Series
Negative resists for direct laser writing @ 405 nm
Data sheet:
Ancillaries:
Application:
ma-P 1200G Positive Resist Series for Grayscale Lithography
Thick positive photoresist designed for the requirements of grayscale lithography
Data sheet:
Ancillaries:
Application:
LIGA Learn More
PMMA and Co-polymer Positive Resists
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
Data sheet:
Ancillaries:
Applications:
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.
Data sheet:
Applications:
Micro Molds and Stamps Learn More
KMPR® Permanent Negative Epoxy Resists
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
Data sheet:
Ancillaries:
Applications:
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
OrmoStamp® UV-curable Hybrid Polymer with High Transparency
Ormostamp® for working stamp fabrication
Data sheet:
Applications:
Microfluidics Learn More
SU-8 3000CF Dry Film Resist
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
SU-8 TF 6000 Negative Resist
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Data Sheet:
Applications:
Flexdym( Pellet’s|Rolls|Sheets )
mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.
Data sheet:
Applications:
OrmoComp®/OrmoClear®FX UV-curable Hybrid Polymers for Moulding of Optical Components
Designed for the production of micro-optical components produced by UV moulding of optical components
Data sheet:
Ancillaries:
Applications:
OrmoStamp® UV-curable Hybrid Polymer with High Transparency
Ormostamp® for working stamp fabrication
Data sheet:
Applications:
Microwell Arrays Learn More
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
SU-8 TF 6000 Negative Resist
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Data Sheet:
Applications:
Surface Modification Learn More
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
Wafer Bonding
PermiNex Photoimageable Bonding Adhesives
Negative tone, epoxy-based, photoimageable bonding resists used as a permanent adhesive layer for the definition and capping of cavity structures.
Data sheets:
Ancillaries:
Application:
Micro & Nano Components
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 TF 6000 Negative Resist
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Data Sheet:
Applications:
OrmoClear® Highly Transparent Materials for Micro-optics
Designed for the production of micro-optical components and wafer scale patterning
Data sheet:
Ancillaries:
Applications:
OrmoComp®/OrmoClear®FX UV-curable Hybrid Polymers for Moulding of Optical Components
Designed for the production of micro-optical components produced by UV moulding of optical components
Data sheet:
Ancillaries:
Applications:
Waveguides
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 TF 6000 Negative Resist
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Data Sheet:
Applications:
EpoCore/Clad Polymers for Waveguide Fabrication
Resist system for laminated waveguides
Data sheet:
Ancillaries:
Application:
OrmoCore/Clad Photo Patterning Hybrid Polymers
ORMOCER® System for Planar Optical Waveguides
Data sheet:
Ancillaries:
Application:
Microfluidics
SU-8 Permanent Negative Epoxy Resists
High contrast, epoxy photoresist designed for micromachining and other microelectronic applications where a thick chemically and thermally stable image is desired.
Data sheets:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
SU-8 TF 6000 Negative Resist
SU-8 TF 6000 negative resists are sensitive to broadband UV radiations (i-, h- and g-line) and recommended wherever high resolution, photo-imageable thin permanent structures are required.
Data Sheet:
Applications:
Flexdym( Pellet’s|Rolls|Sheets )
Dielectric layers Learn More
KMPR® Permanent Negative Epoxy Resists
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
Data sheet:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
Data sheets:
Ancillaries:
Electrowetting (pixel grids) Learn More
KMPR® Permanent Negative Epoxy Resists
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
Data sheet:
Ancillaries:
Applications:
SU-8 2000 Permanent Negative Epoxy Resists
Chemically amplified, i-Line resists, well-suited for the fabrication of permanent device structures
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Bi-Layer Lift-off Learn More
PMGI/LOR Lift-off Resists
Enable high yield, metal lift-off processing in a range of applications from data storage and wireless ICs to MEMS.
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UniLOR® N Single-layer Lift-off Photoresists
Negative-tone resists for lift-off processes.
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LOL™ 1000 & 2000 Lift-off Layers
Enhanced dissolution rate, dyed PMGI solution used for lift-off processes requiring tight CD control.
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SPR™220 Thick i-Line Resists
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
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S1800® G2 Broadband Resists
Positive photoresists for advanced IC device fabrication.
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SPR™ 955-CM High-resolution i-Line Resists
General purpose, high-throughput, i-Line photoresist for 0.35 µm front-end and back-end applications
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Dry Etch Learn More
KMPR® Permanent Negative Epoxy Resists
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
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SPR™220 Thick i-Line Resists
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
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SPR™3000 Series Broadband Resists
SPR™3000 Series Broadband Resists
Positive photoresist engineered for i-line, g-line, and broadband applications with high resolution, high throughput, and excellent process latitudes.
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ma-P 1200 Positive Resist Series
Photoresist series designed for the use in microelectronics and microsystems technology
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E-beam Lithography Learn More
PMMA and Co-polymer Positive Resists
PMMA and co-polymer e-beam resists for direct write applications. Excellent for T-gate and other metal deposition processes.
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ma-N 2400 DUV e-beam Resists
Negative photoresist series well suited for e-beam and deep UV exposure in the manufacturing of semiconductor devices.
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Electrodeposition Learn More
InterVia™ 3D-P Electrophoretic Resists
Negative photoresist emulsion that can be applied onto a wide variety of electrically-conductive substrates by anaphoretic electrodeposition.
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InterVia™ 3D-N Electrophoretic Resists
Negative photoresist emulsion that can be applied onto a wide variety of electrically-conductive substrates by cathodic electrodeposition.
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Grayscale
ma-P 1200G Positive Resist Series for Grayscale Lithography
Thick positive photoresist designed for the requirements of grayscale lithography
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High Resolution i-Line Learn More
SPR™ 955-CM High-resolution i-Line Resists
General purpose, high-throughput, i-Line photoresist for 0.35 µm front-end and back-end applications
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SPR™3600M Advanced i-Line Resists
Dyed photoresist for extremely high throughput processing on reflective substrates.
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Negative DUV/e-beam
ma-N 2400 DUV e-beam Resists
Negative photoresist series well suited for e-beam and deep UV exposure in the manufacturing of semiconductor devices.
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Negative DUV Resists Learn More
UVN® 30 Negative DUV Photoresist
An advanced resist for 130 nm design rules:
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ma-N 2400 DUV e-beam Resists
Negative photoresist series well suited for e-beam and deep UV exposure in the manufacturing of semiconductor devices.
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Plating: Thick Negative Resists Learn More
TempKoat™ N 15 Negative Temporary Photoresist
Thick, negative-tone, temporary resist for advanced packaging and MEMS applications.
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Applications
KMPR® Permanent Negative Epoxy Resists
High contrast, epoxy photoresist for DRIE and plating, TMAH-developable.
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BPR™-100 Thick Resists
Negative photoresist for use in a wide variety of plating and etching processes used in wafer level packaging (WLP)
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Plating: Thick Positive Resists Learn More
TempKoat™ P 20 Thick Positive Resist
Thick, positive-tone, temporary resist for advanced packaging and MEMS applications.
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Applications
SPR™220 Thick i-Line Resists
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
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ma-P 1200 Positive Resist Series
Photoresist series designed for the use in microelectronics and microsystems technology
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ma-P 1275 & ma-P 1275HV Thick Positive Resists
Thick photoresists designed for electroplating structures in microsystems technology
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Positive DUV Resists Learn More
UV6™ Positive DUV Resist
Optimized to provide vertical profile imaging of dense and semi-isolated features for device production design rules to 180 nm
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UV™26 Positive DUV Resist
Positive DUV photoresist developed for deep implant applications
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UV™135 Positive DUV Resist
An advanced resist for 130 nm design rules:
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UV™210GS Positive DUV Resist
Multipurpose resist that can be utilized for gate, phase shift mask contact holes, and trench applications in the 180-130 nm CD range
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Single Layer Lift-Off
UniLOR® N Single-layer Lift-off Photoresists
Negative-tone resists for lift-off processes.
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Applications
ma-N 400 & ma-N 1400 Negative Resists
Conventional pattern transfer and single-layer lift-off for microelectronics and micro systems technology
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Wet Etch
SPR™220 Thick i-Line Resists
General purpose, multi-wavelength photoresist designed to cover a wide range of film thicknesses with a single-coat process
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S1800® G2 Broadband Resists
Positive photoresists for advanced IC device fabrication.
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ma-P 1200 Positive Resist Series
Photoresist series designed for the use in microelectronics and microsystems technology
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UV-based NIL:
UV-based NIL:
OrmoClear® Highly Transparent Materials for Micro-optics
Designed for the production of micro-optical components and wafer scale patterning
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mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.
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mr-NIL 6000E UV-cure Resist for Thermal NIL
UV-curable material for permanent applications with isothermal processing
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mr-NIL200 UV-curable Material for Photoimprint with Impermeable Stamps
Low viscosity, solvent-free photo-curable NIL resist specifically designed for use with rigid and gas-impermeable working stamps like COC, COP, OrmoStamp®, or glass.
Very low release forces
No adhesion promoter or primer necessary
No oxygen inhibition
Mask for pattern transfer processes (dry and wet etching)
Data Sheet
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mr-NIL210 Photo-curable Nanoimprint Resist
NIL resist with excellent curing and nanoimprint performance in combination with PDMS soft stamp materials.
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mr-NIL212FC Fast Curing Photo-curable Nanoimprint Resist with Superior Dry Etch Performance
mr-NIL212FC is a purely organic, photo-curable NIL resist with outstanding dry etch characteristics, fast curing properties and an excellent nanoimprint performance. It is particularly suited for soft-NIL using soft stamp materials such as PDMS. mr-NIL212FC exhibits a markedly enhanced etching stability in RIE processes compared to mr-NIL210.
Data Sheet
Applications
mr-XNIL26SF Solvent-free UV-curable Nanoimprint Resist
NIL resist with a high level of fluorinated components yielding excellent stamp release properties and minimal defects.
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OrmoComp®/OrmoClear®FX UV-curable Hybrid Polymers for Moulding of Optical Components
Designed for the production of micro-optical components produced by UV moulding of optical components
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OrmoStamp® UV-curable Hybrid Polymer with High Transparency
Ormostamp® for working stamp fabrication
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mr-UVCur26SF Photo-curable Nanoimprint Resist for Roll-to-Roll Processes
NIL resist applicable by inkjet printing and with high curing speeds suitable for roll-to-roll NIL processes.
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Mold Replication
OrmoStamp® UV-curable Hybrid Polymer with High Transparency
Ormostamp® for working stamp fabrication
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Pattern Transfer
mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.
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mr-NIL 6000E UV-cure Resist for Thermal NIL
UV-curable material for permanent applications with isothermal processing
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mr-NIL200 UV-curable Material for Photoimprint with Impermeable Stamps
Low viscosity, solvent-free photo-curable NIL resist specifically designed for use with rigid and gas-impermeable working stamps like COC, COP, OrmoStamp®, or glass.
Very low release forces
No adhesion promoter or primer necessary
No oxygen inhibition
Mask for pattern transfer processes (dry and wet etching)
Data Sheet
Applications:
mr-NIL210 Photo-curable Nanoimprint Resist
NIL resist with excellent curing and nanoimprint performance in combination with PDMS soft stamp materials.
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Applications:
mr-NIL212FC Fast Curing Photo-curable Nanoimprint Resist with Superior Dry Etch Performance
mr-NIL212FC is a purely organic, photo-curable NIL resist with outstanding dry etch characteristics, fast curing properties and an excellent nanoimprint performance. It is particularly suited for soft-NIL using soft stamp materials such as PDMS. mr-NIL212FC exhibits a markedly enhanced etching stability in RIE processes compared to mr-NIL210.
Data Sheet
Applications
mr-XNIL26SF Solvent-free UV-curable Nanoimprint Resist
NIL resist with a high level of fluorinated components yielding excellent stamp release properties and minimal defects.
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mr-UVCur26SF Photo-curable Nanoimprint Resist for Roll-to-Roll Processes
NIL resist applicable by inkjet printing and with high curing speeds suitable for roll-to-roll NIL processes.
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Permanent Applications
OrmoClear® Highly Transparent Materials for Micro-optics
Designed for the production of micro-optical components and wafer scale patterning
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OrmoComp®/OrmoClear®FX UV-curable Hybrid Polymers for Moulding of Optical Components
Designed for the production of micro-optical components produced by UV moulding of optical components
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OrmoStamp® UV-curable Hybrid Polymer with High Transparency
Ormostamp® for working stamp fabrication
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mr-UVCur26SF Photo-curable Nanoimprint Resist for Roll-to-Roll Processes
NIL resist applicable by inkjet printing and with high curing speeds suitable for roll-to-roll NIL processes.
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Thermal NIL:
Thermal NIL:
mr-I 7000R / mr-I 8000R Thermoplastic Polymers for Thermal NIL
Thermoplastics with built-in release properties for use as etch mask for pattern transfer and the fabrication of nanopatterns
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mr-I 9000M Thermal Cure Polymers for Thermal NIL
mr-I 9000M for micro and nanofabrication
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mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.
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SIPOL Series Thermal NIL Resists for High Aspect Ratio Pattern Transfer
Silicon-containing thermal nanoimprint resist for the fabrication of high aspect ratio patterns
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Pattern Transfer
mr-I 7000R / mr-I 8000R Thermoplastic Polymers for Thermal NIL
Thermoplastics with built-in release properties for use as etch mask for pattern transfer and the fabrication of nanopatterns
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mr-I 9000M Thermal Cure Polymers for Thermal NIL
mr-I 9000M for micro and nanofabrication
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mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.
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SIPOL Series Thermal NIL Resists for High Aspect Ratio Pattern Transfer
Silicon-containing thermal nanoimprint resist for the fabrication of high aspect ratio patterns
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Permanent Applications
mr-I 9000M Thermal Cure Polymers for Thermal NIL
mr-I 9000M for micro and nanofabrication
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mr-I T85 Thermoplastic polymer for Thermal NIL
Non-polar thermoplastic for permanent applications.