KMPR® 1000 i-Line photoresist is a high contrast, epoxy based photoresist that can be developed in a conventional aqueous alkaline developer (TMAH). KMPR® 1000 is designed to coat 4-110 µm in a single step using five standard viscosities.
KMPR® 1000 can be easily removed after completion of electroforming using commercially available chemical removers. Lithography can be used to form KMPR® 1000 molds that have the required dimensional accuracy and sidewall verticality for micro electroforming.
Deep reactive ion etching (DRIE) compatible with the CMOS process, KMPR® 1000 will survive dry etch for the extended periods of time necessary to perform >20 µm deep etching with HAR.