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Overview

During exposure, the photoresist undergoes cross‑linking, creating highly stable regions that become insoluble in standard liquid developers, ensuring precise pattern retention. With its excellent optical transparency above 360 nm, SU‑8 enables the formation of near‑vertical sidewalls even in very thick film layers, making it ideal for high‑aspect‑ratio microstructures.

Because of its long‑term stability and strong material properties, SU‑8 is best suited for permanent microfabrication applications where the patterned resist remains in place after imaging and curing.

Key features

  • High aspect ratio imaging with near vertical sidewalls
  • Near UV (350-400 nm) processing
  • Superb chemical and temperature resistance
  • Film thicknesses from 2 to 200 μm with single spin coat processes

Industry Applications

  • MEMS and microsystem manufacturing
  • Micro-optics and photonic components
  • Sensor and actuator fabrication
  • Inkjet nozzles
  • Microfluidic PDMS Devices and lab-on-chip devices

Recommended ancillaries

EBR PG

Edge Bead Remover
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SU-8 Developer

SU-8, SU-8 3000, SU-8 TF 6000, SU-8 XFT 75 & 100, KMPR 1000, and KMSF 2000 resist development.
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Remover PG

To strip PMGI, LOR, PMMA, KMPR® 1000 & minimally cross-linked SU-8 resists
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MicroChem Remover 1112A

To strip photoresist coatings on photo-masks, optoelectronic displays, thin film circuits, and other microelectronic devices.
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