ma-N 400

Ideally suited for evaporative lift-off processing
Film thickness up to 20 μm
Plating stability to pH13

ma-N 1400

Ideally suited for high temperature lift-off processing
Film thickness from 0.5 μm- 7.0 μm
Thermally stable to 170° C
Compatible with high temperature sputter lift-off processes

ma-N 2400

Deep UV & e-beam resists
50 nm resolution with e-beam
High plasma etch stability

mr-DWL

Negative Resist Series for Direct Laser Writing