For the fabrication of polymer waveguides
Negative Photoresists
mr-DWL
Negative Resist Series for Direct Laser Writing
ma-N 400
Ideally suited for evaporative lift-off processing
Film thickness up to 20 μm
Plating stability to pH13
ma-N 1400
Ideally suited for high temperature lift-off processing
Film thickness from 0.5 μm- 7.0 μm
Thermally stable to 170° C
Compatible with high temperature sputter lift-off processes
ma-N 2400
Deep UV & e-beam resists
50 nm resolution with e-beam
High plasma etch stability