UniLOR® N: FAQs
What type of resist is UniLOR® N?
UniLOR® N is a chemically amplified, negative-tone resist intended for high temperature lift-off applications. It can be used as a single layer lift-off resist or as the imaging resist on top of PMGI or LOR in a bi-layer lift-off scheme.
What are common applications for UniLOR® N?
Single layer lift-off resist using metal evaporation or physical vapor deposition processes requiring < 3 microns of metallization.
What is the casting solvent of the resist?
The solvent contained in UniLOR® N is PGMEA / Cyclopentanone.
Does UniLOR® N require a primer?
HMDS priming is recommended on bare silicon.
Is an EBR removal step necessary/recommended and what EBR solvent can be used?
Customers should use EBR PG for best EBR results.
Is it necessary to do a post exposure bake? Hard bake?
The PEB step is necessary to complete the thermally driven catalytic reaction that causes the exposed resist to become insoluble to the aqueous developer. A hard bake is not required, as the resist is meant to be temporary and stripped post-processing.
How controllable is the sidewall angle?
The sidewall profile may be varied by exposure dose and post exposure bake temperature.
What is the resist lift-off process?
Kayaku Advanced Materials’s Remover PG (NMP-based) or DuPont’s INTERVIA™ 2011 Remover (DMSO/GBL based) are recommended for lift-off.
Heating and ultrasonication can improve lift-off quality and rates.
Lift-off times range from 10 – 30 minutes for complete lift-off depending on heat and sonication conditions.