UniLOR® N is a chemically amplified, negative-tone resist intended for high temperature lift-off applications. It can be used as a single layer lift-off resist or as the imaging resist on top of PMGI or LOR in a bi-layer lift-off scheme.
The PEB step is necessary to complete the thermally driven catalytic reaction that causes the exposed resist to become insoluble to the aqueous developer. A hard bake is not required, as the resist is meant to be temporary and stripped post-processing.
KAM’s Remover PG (NMP-based) or DuPont’s INTERVIA™ 2011 Remover (DMSO/GBL based) are recommended for lift-off.
Heating and ultrasonication can improve lift-off quality and rates.
Lift-off times range from 10 – 30 minutes for complete lift-off depending on heat and sonication conditions.
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